item drain-source voltage gate-source voltage total power dissipation storage temperature channel temperature symbol v ds v gs 15 -5 42.8 -65 to +175 175 t c = 25 c v v w c c p t t stg t ch condition unit rating absolute maximum rating (ambient temperature ta=25 c) fujitsu recommends the following conditions for the reliable operation of gaas fets: 1. the drain-source operating voltage (v ds ) should not exceed 10 volts. 2. the forward and reverse gate currents should not exceed 32.0 and -4.4 ma respectively with gate resistance of 100 ? . 1 edition 1.0 december 2000 description the FLM3135-8F is a power gaas fet that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. eudyna s stringent quality assurance program assures the highest reliability and consistent performance. features ?high output power: p 1db = 39.5dbm (typ.) ?high gain: g 1db = 11.0db (typ.) ?high pae: add = 37% (typ.) ?low im 3 = -45dbc@po = 28.5dbm ?broad band: 3.1 ~ 3.5ghz ?impedance matched zin/zout = 50 ? ?hermetically sealed package FLM3135-8F c-band internally matched fet item saturated drain current transconductance pinch-off voltage gate source breakdown voltage power-added efficiency 3rd order intermodulation distortion output power at 1db g.c.p. power gain at 1db g.c.p. symbol i dss - 3900 5850 - 2000 - -1.0 -2.0 -3.5 -5.0 - - 10.0 11.0 - -37- 38.5 39.5 - v ds = 5v, i ds = 180ma v ds = 5v, i ds = 2200ma v ds = 5v, v gs = 0v i gs = -180 a v ds =10v, i ds = 0.55 i dss (typ.), f = 3.1 ~ 3.5 ghz, z s =z l = 50 ohm f = 3.5 ghz, ? f = 10 mhz 2-tone test p out = 28.5dbm s.c.l. ma ms v db % -42 -45 - dbc dbm v g m v p v gso p 1db g 1db drain current - 2200 2600 ma i dsr im 3 add gain flatness -- 0.6 db ? g test conditions unit limit typ. max. min. electrical characteristics (ambient temperature ta=25 c) channel to case thermal resistance - 3.0 3.5 c/w r th g.c.p.: gain compression point, s.c.l.: single carrier level case style: ib 10v x i dsr x r th channel temperature rise -- 80 c ? t ch
2 FLM3135-8F c-band internally matched fet power derating curve 30 50 40 20 10 0 50 100 150 200 case temperature ( c) total power dissipation (w) output power & im 3 vs. input power v ds =10v f 1 = 3.5 ghz f 2 = 3.51 ghz 2-tone test 14 18 16 20 22 input power (s.c.l.) (dbm) s.c.l.: single carrier level 29 31 33 35 27 25 23 -55 -45 -35 -25 -15 output power (s.c.l.) (dbm) im 3 p out im 3 (dbc) output power vs. frequency 3.1 3.2 3.3 3.4 3.5 frequency (ghz) 35 37 39 41 33 output power (dbm) v ds =10v p 1db output power vs. input power v ds =10v f = 3.3 ghz 23 27 25 29 input power (dbm) 39 41 37 35 33 30 45 15 output power (dbm) add p out add (%) pin=29dbm 26dbm 24dbm 22dbm
3 FLM3135-8F c-band internally matched fet +j250 +j100 +j50 +j25 +j10 0 -j10 -j25 -j50 -j100 -j250 s 11 s 22 180 +90 0 -90 s 21 s 12 10 100 250 3.6ghz 3.6ghz 3.6ghz 3.6ghz 3.5 3.5 3.4 3.4 3.3 3.3 3.2 3.2 3.1 3.1 3.0 3.0 3.5 3.5 3.4 3.4 3.3 3.3 3.2 3.2 3.1 3.1 3.0 3.0 0.2 0.1 2 3 4 scale for |s 21 | 50 ? scale for |s 12 | 1 s-parameters v ds = 10v, i ds = 2200ma frequency s11 s21 s12 s22 (mhz) mag ang mag ang mag ang mag ang 3000 .638 150.7 4.214 81.8 .071 20.0 .333 66.1 3100 .683 128.0 4.042 59.0 .071 -2.4 .274 58.9 3200 .670 109.1 4.005 36.5 .073 -24.8 .206 41.6 3300 .604 92.2 4.105 13.0 .078 -47.5 .135 0.1 3400 .475 77.0 4.264 -13.8 .085 -73.5 .155 -78.8 3500 .284 72.3 4.333 -44.9 .090 -102.8 .285 -130.6 3600 .217 116.0 4.095 -79.5 .088 -136.1 .402 -168.7
4 FLM3135-8F c-band internally matched fet 2-r 1.6 0.15 (0.063) 0.6 (0.024) 10.7 (0.421) 12.0 (0.422) 17.0 0.15 (0.669) 21.0 0.15 (0.827) 12.9 0.2 (0.508) 2.0 min. (0.079) 2.0 min. (0.079) 0.2 max. (0.008) 1.45 (0.059) case style "ib" metal-ceramic hermetic package unit: mm(inches) 1. gate 2. source (flange) 3. drain 5.2 max. (0.205) 2.6 0.15 (0.102) 0.1 (0.004) 1 2 3 eudyna devices inc. products contain gallium arsenide (gaas) which can be hazardous to the human body and the environment. for safety, observe the following procedures: caution ?do not put this product into the mouth. ?do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. ?observe government laws and company regulations when discarding this product. this product must be discarded in accordance with methods specified by applicable hazardous waste procedures. for further information please contact: eudyna devices usa inc. 2355 zanker rd. san jose, ca 95131-1138, u.s.a. tel: (408) 232-9500 fax: (408) 428-9111 www.us.eudyna.com eudyna devices europe ltd. network house norreys drive maidenhead, berkshire sl6 4fj united kingdom tel: +44 (0) 1628 504800 fax: +44 (0) 1628 504888 eudyna devices asia pte ltd. hong kong branch rm. 1101, ocean centre, 5 canton rd. tsim sha tsui, kowloon, hong kong tel: +852-2377-0227 fax: +852-2377-3921 eudyna devices inc. sales division 1, kanai-cho, sakae-ku yokohama, 244-0845, japan tel: +81-45-853-8156 fax: +81-45-853-8170 eudyna devices inc. reserves the right to change products and specifications without notice. the information does not convey any license under rights of eudyna devices inc. or others. ? 2004 eudyna devices usa inc. printed in u.s.a.
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